
This is an organic polymer with which SiC is derived by sintering.
| ・ | By use of SMP-10, a high-purity SiC can be formed at 850 Degrees C. | |||
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Application method could either be by brushing or by spray. There is no limit to the substrate size since sintering is possible if there is an inert atmosphere reactor available. Irrespective of what the sintered body may be, the substrate could be adopted to various fibers. If similar other grades are used, bonds of ceramics to ceramics and production of SiC ceramics itself is possible. |
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By use of CVD-4000, a 1:1 high-purity SiC coated film can be formed. Hydrogen contents differ by accumulated temperature. For not being corrosive and not generating corrosive gases, there is no environmental pollution by HCl as used to be with the conventional SiC CVD. Since it is a simple system, supplying the raw material to a inexpensive glass or metal reactors, high reproducibility is thus achieved. |
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Brake Pad and Brake Rotor Jigs for Semiconductor Process and the related Coating Thermal Resistance & Oxidation Resistance Coatings Reinforcement Coating for Ceramics and Optical Fibers Adhesive for Ceramic-Ceramic and Ceramic-Metal | ![]() |
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